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Mark out all the statements about the way to reduce the electromigration risk.

A. a) Keeping the current below 0.5 to 1mA/um
B. b) Controlling the granularity of the ions
C. c) Adding alloying elements (such as Cu or Tu) to aluminum to prevent the movement of the Al ions
D. d) Introducing new interconnect materials

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An abrupt junction has doping densities of NA=1016cm-3, and ND=1016cm-3. Calculate the built-in potential at 300K. As we know, the intrinsic carrier concentration ni=1.5x1010cm-3, and Boltzmann constant k=8.63*10-5eV/K. Which one of the following built-in potentials is nearest to the correct one?

A. a) 638mV
B. b) 697mV
C. c) 538mV
D. d) 597mV

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Why is PMOS always placed above NMOS?

A. a) PMOS produces weak one and NMOS produces strong zero
B. b) PMOS produces weak one and NMOS produces weak zero
C. c) PMOS produces strong one and NMOS produces strong zero
D. d) PMOS produces strong one and NMOS produces weak zero

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Mark out all the correct statements about pipeline.

A. a) Pipelining increases throughput in the sense that the critical path becomes shorter
B. b) Pipelining decreases the latency in number of cycles
C. c) Pipelining increases the efficient usage of the logic
D. d) C2MOS pipeline is race free as long as the logic functions between the latches are inverting.

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Size the NMOS and PMOS devices in Fig. 2 so that the output resistance is the same as that of an inverter with an NMOS W/L = 4 and PMOS W/L = 8. (fill in the blank) a) NMOS A W/L = ？ , PMOS A W/L = ？ ; b) NMOS B W/L = ？ , PMOS B W/L = ？ ; c) NMOS C W/L = ？ , PMOS C W/L = ？ ; d) NMOS D W/L = ？ , PMOS D W/L = ？ ; ______

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Mark out all the statements about the way to reduce the electromigration risk.

A. a) Keeping the current below 0.5 to 1mA/um B. b) Controlling the granularity of the ions C. c) Adding alloying elements (such as Cu or Tu) to aluminum to prevent the movement of the Al ions D. d) Introducing new interconnect materials

An abrupt junction has doping densities of NA=1016cm-3, and ND=1016cm-3. Calculate the built-in potential at 300K. As we know, the intrinsic carrier concentration ni=1.5x1010cm-3, and Boltzmann constant k=8.63*10-5eV/K. Which one of the following built-in potentials is nearest to the correct one?

Why is PMOS always placed above NMOS?

Mark out all the correct statements about pipeline.

A. a) Keeping the current below 0.5 to 1mA/um
B. b) Controlling the granularity of the ions
C. c) Adding alloying elements (such as Cu or Tu) to aluminum to prevent the movement of the Al ions
D. d) Introducing new interconnect materials