题目内容

Consider the following abrupt junction diode (m=0.5): Cj0=3x10-3F/m2, AD=1μm2, and Ф0=0.64V. If we apply a reverse bias of -2.5V, what’s the value of the total junction capacitance? (select the nearest value)

A. a) 1fF
B. b) 1.15fF
C. c) 1.35fF
D. d) 1.5fF

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What’s the value of the channel capacitance between the gate and source of a MOS transistor working in saturation region?

A. a) COXWL
B. b) COXWL/2
C. c) (2/3)COXWL
D. d) 0

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The delay of critical path for which adder in the following is NOT in linear relation with the number of bits N?

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B. b) Carry-bypass adder
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An NMOS transistor has a threshold voltage VT0 of 0.43V, while the body-effect coefficient equals 0.4V0.5. Compute the threshold voltage for VSB=-2.5V and 2ФF=0.6V. (select the nearest value)

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B. b) 0.2V
C. c) -0.8V
D. d) 0.8V

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A. a) Keeping the current below 0.5 to 1mA/um
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D. d) Introducing new interconnect materials

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Consider the following abrupt junction diode (m=0.5): Cj0=3x10-3F/m2, AD=1μm2, and Ф0=0.64V. If we apply a reverse bias of -2.5V, what’s the value of the total junction capacitance? (select the nearest value)

A. a) 1fF B. b) 1.15fF C. c) 1.35fF D. d) 1.5fF

What’s the value of the channel capacitance between the gate and source of a MOS transistor working in saturation region?

The delay of critical path for which adder in the following is NOT in linear relation with the number of bits N?

An NMOS transistor has a threshold voltage VT0 of 0.43V, while the body-effect coefficient equals 0.4V0.5. Compute the threshold voltage for VSB=-2.5V and 2ФF=0.6V. (select the nearest value)

Mark out all the statements about the way to reduce the electromigration risk.

A. a) 1fF
B. b) 1.15fF
C. c) 1.35fF
D. d) 1.5fF