题目内容

When metal work function is smaller than n-type semiconductor electron affinity, ______ contact is formed.

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The surface heavily doped semiconductor must form ohmic contact based on the ______ effect.

Wen metal work function is larger than n-type semiconductor electron affinity, ______ contact is created.

Schottky barrier diode is based on ______ electron emission theory.

The ideal Schottky barrier height is equal to metal work function subtract semiconductor electron affinity. ( )

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