题目内容

Schottky barrier diode is based on ______ electron emission theory.

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The ideal Schottky barrier height is equal to metal work function subtract semiconductor electron affinity. ( )

The current of Schottky barrier diode is dominated by majority carriers. ( )

When surface state density is close to infinity, Schottky barrier is fixed by the bandgap and the potential φ0 of semiconductor. ( )

2D electron gas exists in ()

A. p-P heterojunction
B. n-N heterojunction
C. n-P heterojunction
D. N-p heterojunction

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