When surface state density is close to infinity, Schottky barrier is fixed by the bandgap and the potential φ0 of semiconductor. ( )
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2D electron gas exists in ()
A. p-P heterojunction
B. n-N heterojunction
C. n-P heterojunction
D. N-p heterojunction
Schottky effect is also called the mirror image force reduction effect of the barrier. ( )
Ohmic contact can be produced by nonrectifying contact and tunneling effect. ( )
The tunneling effect increases with the increase of doping concentration. ( )