题目内容
Vacancy and ()are the two types of point defect.
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()is a method by which gas-phase precursor are alternately passed into the reactor and chemically adsorbed and react on the substrate and form a deposited film.
A ( ) is a small volume of the crystal that can be used to reproduce the entire crystal and it is not a unique entity.
The full name of PVD is ______ .
The earliest method of growing semiconductor materials is called ().
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