题目内容

()is a method by which gas-phase precursor are alternately passed into the reactor and chemically adsorbed and react on the substrate and form a deposited film.

A. Epitaxial Growth
B. ALD
C. PLD
D. PVD

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A ( ) is a small volume of the crystal that can be used to reproduce the entire crystal and it is not a unique entity.

A. primitive cell
B. unit cell
C. basic cell
D. origin cell

The full name of PVD is ______ .

The earliest method of growing semiconductor materials is called ().

A. Czochralski method
B. Epitaxial growth method
C. Spin-coating method
D. Magnetron sputtering method

Which of the following methods are the main growth methods of semiconductors materials().

A. Epitaxial Growth
B. PVD,CVD
C. PLD、ALD
D. Sol-gel、Spin-coating、Roll-to-roll

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