题目内容

The transferred-electron phenomenon is demonstrated in a few semiconductors in which conduction electrons in ___________ are scattered to __________ by a high electric field.

A. a low-mobility band; a high-mobility band
B. a high-mobility band; a low-mobility band
C. the conduction band; the valence band
D. the valence band; the conduction band

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Which is NOT semiconductor microwave device? _________

A. Tunnel Diode
B. GUNN Diode
C. IMPATT Diode
D. Photodiode

In an interdigitated bipolar transistor, relatively large emitter widths are required to prevent the emitter current crowding effects. ( )

Compared to bipolar power transistors, the superior performance characteristics of power MOSFETs are _____________

A. faster switching times
B. no second breakdown
C. stable gain over a wide temperature range.
D. stable response time over a wide temperature range.

A Semiconductor Controlled Rectifier (SCR) is the common name given a three-terminal thyristor. The SCR is a four-layer pnpn structure witha gate control terminal. ( )

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