题目内容

In an interdigitated bipolar transistor, relatively large emitter widths are required to prevent the emitter current crowding effects. ( )

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Compared to bipolar power transistors, the superior performance characteristics of power MOSFETs are _____________

A. faster switching times
B. no second breakdown
C. stable gain over a wide temperature range.
D. stable response time over a wide temperature range.

A Semiconductor Controlled Rectifier (SCR) is the common name given a three-terminal thyristor. The SCR is a four-layer pnpn structure witha gate control terminal. ( )

Multiple heterojunction layers HEMT can increase the current capacity and power performance is improved. ( )

The transconductance is the transistor gain of the JFET; it indicates the amount of control the gate voltage has on the drain current. ( )