题目内容

Why is PMOS always placed above NMOS?

A. ) PMOS produces weak one and NMOS produces strong zero
B. ) PMOS produces weak one and NMOS produces weak zero
C. ) PMOS produces strong one and NMOS produces strong zero
D. ) PMOS produces strong one and NMOS produces weak zero

查看答案

搜索结果不匹配？点我反馈

更多问题

From circuit design perspective, sum generation of carry-lookahead adder is dependent of the number of bits.

查看答案

An abrupt junction has doping densities of NA=1016cm-3, and ND=1016cm-3. Calculate the built-in potential at 300K. As we know, the intrinsic carrier concentration ni=1.5x1010cm-3, and Boltzmann constant k=8.63*10-5eV/K. Which one of the following built-in potentials is nearest to the correct one?

A. ) 638mV
B. ) 697mV
C. ) 538mV
D. ) 597mV

查看答案

Schmitt trigger responds to a slowly changing input waveform with a fast transition time at the output.

查看答案

Mark out all the statements about the way to reduce the electromigration risk.

A. ) Keeping the current below 0.5 to 1mA/um
B. ) Controlling the granularity of the ions
C. ) Adding alloying elements (such as Cu or Tu) to aluminum to prevent the movement of the Al ions
D. ) Introducing new interconnect materials

查看答案

Why is PMOS always placed above NMOS?

A. ) PMOS produces weak one and NMOS produces strong zero B. ) PMOS produces weak one and NMOS produces weak zero C. ) PMOS produces strong one and NMOS produces strong zero D. ) PMOS produces strong one and NMOS produces weak zero

From circuit design perspective, sum generation of carry-lookahead adder is dependent of the number of bits.

An abrupt junction has doping densities of NA=1016cm-3, and ND=1016cm-3. Calculate the built-in potential at 300K. As we know, the intrinsic carrier concentration ni=1.5x1010cm-3, and Boltzmann constant k=8.63*10-5eV/K. Which one of the following built-in potentials is nearest to the correct one?

Schmitt trigger responds to a slowly changing input waveform with a fast transition time at the output.

Mark out all the statements about the way to reduce the electromigration risk.

A. ) PMOS produces weak one and NMOS produces strong zero
B. ) PMOS produces weak one and NMOS produces weak zero
C. ) PMOS produces strong one and NMOS produces strong zero
D. ) PMOS produces strong one and NMOS produces weak zero