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From circuit design perspective, sum generation of carry-lookahead adder is dependent of the number of bits.

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An abrupt junction has doping densities of NA=1016cm-3, and ND=1016cm-3. Calculate the built-in potential at 300K. As we know, the intrinsic carrier concentration ni=1.5x1010cm-3, and Boltzmann constant k=8.63*10-5eV/K. Which one of the following built-in potentials is nearest to the correct one?

A. ) 638mV
B. ) 697mV
C. ) 538mV
D. ) 597mV

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Schmitt trigger responds to a slowly changing input waveform with a fast transition time at the output.

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Mark out all the statements about the way to reduce the electromigration risk.

A. ) Keeping the current below 0.5 to 1mA/um
B. ) Controlling the granularity of the ions
C. ) Adding alloying elements (such as Cu or Tu) to aluminum to prevent the movement of the Al ions
D. ) Introducing new interconnect materials

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An NMOS transistor has a threshold voltage VT0 of 0.43V, while the body-effect coefficient equals 0.4V0.5. Compute the threshold voltage for VSB=-2.5V and 2ФF=0.6V. (select the nearest value)

A. ) 0.43V
B. ) 0.2V
C. ) -0.8V
D. ) 0.8V

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