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Solar simulators are used to study the performance of solar cells in the lab. In the figure below (left picture), the spectral power density of a solar simulator is shown with the blue line. The spectral power density of this solar simulator is given by: \(P(\lambda) = 7.510^{15} \lambda - 2.2510^9~[Wm^{-2}m^{-1}]\) for \(300 nm \lt \lambda \lt 500 nm\) \(P(\lambda) = 2.2510^9 - 1.510^{15} \lambda~[Wm^{-2}m^{-1}]\) for \(500 nm \lt \lambda \lt 1500 nm\) Where the wavelength \( \lambda\) is expressed in meters. Calculate the irradiation \( I\) of the solar simulator (in \(Wm^{-2}\) ) ______

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On the left-hand side of the figure below a III-V triple junction solar cell is shown. On the right-hand side, the J-V curves of the individual component cells and the multi-junction solar cell are shown.Which junction corresponds to sub cell 3?

A. Sub cell based on Ge.
B. Sub cell based on GaAs.
C. Sub cell based on GaInP.
D. Sub cell based on GaInAs.

During manufacturing of a CIGS device, the metal back contact is deposited first, while in case of the CdTe solar cells, the back contact is deposited in the last processing step. What are the configurations of both cells:

A. Both the CI(G)S and CdTe solar cells are made in superstrate stucture.
B. The CI(G)S solar cell is made in a superstrate structure, whereas CdTe solar cell is made in a substrate structure.
C. The CI(G)S solar cell is made in a substrate structure, whereas CdTe solar cell is made in a superstrate structure.
D. Both CI(G)S and CdTe solar cells are made in substrate stucture.

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Consider a small module based on interconnected tandem cells of hydrogenated amorphous and microcrystalline silicon as depicted in the figure below. The \(V_{oc}\) of a single tandem cell is \(1.35 V\) and the short-circuit density \(J_{sc}\) is \(12 \,mA/cm^2\).Which combination of the external parameters can reflect the external parameters of the module depicted in the figure above?

A. ) \(V_{oc,module}=16.2V\), \(I_{sc,module}=60mA\)
B. ) \(V_{oc,module}=16.2V\), \(I_{sc,module}=120mA\)
C. ) \(V_{oc,module}=32.4V\), \(I_{sc,module}=720A\)
D. ) \(V_{oc,module}=32.4V\), \(I_{sc,module}=120mA\)

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What is true about DSSC's?

A. The electrons that pass through the external load oxidize the iodide to yield triodide.
B. The electrons that pass through the external load reduce the iodide to yield triodide.
C. The electrons that pass through the external load oxidize the triodide to yield iodide.
D. The electrons that pass through the external load reduce the triodide to yield iodide.

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