During manufacturing of a CIGS device, the metal back contact is deposited first, while in case of the CdTe solar cells, the back contact is deposited in the last processing step. What are the configurations of both cells:
A. Both the CI(G)S and CdTe solar cells are made in superstrate stucture.
B. The CI(G)S solar cell is made in a superstrate structure, whereas CdTe solar cell is made in a substrate structure.
C. The CI(G)S solar cell is made in a substrate structure, whereas CdTe solar cell is made in a superstrate structure.
D. Both CI(G)S and CdTe solar cells are made in substrate stucture.
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Consider a small module based on interconnected tandem cells of hydrogenated amorphous and microcrystalline silicon as depicted in the figure below. The \(V_{oc}\) of a single tandem cell is \(1.35 V\) and the short-circuit density \(J_{sc}\) is \(12 \,mA/cm^2\).Which combination of the external parameters can reflect the external parameters of the module depicted in the figure above?
A. ) \(V_{oc,module}=16.2V\), \(I_{sc,module}=60mA\)
B. ) \(V_{oc,module}=16.2V\), \(I_{sc,module}=120mA\)
C. ) \(V_{oc,module}=32.4V\), \(I_{sc,module}=720A\)
D. ) \(V_{oc,module}=32.4V\), \(I_{sc,module}=120mA\)
What is true about DSSC's?
A. The electrons that pass through the external load oxidize the iodide to yield triodide.
B. The electrons that pass through the external load reduce the iodide to yield triodide.
C. The electrons that pass through the external load oxidize the triodide to yield iodide.
D. The electrons that pass through the external load reduce the triodide to yield iodide.
In dye-sensitized solar cells (DSSC's) the absorption of photons occurs in:
A. The wide band gap of the semiconductor TiO2
B. The dye
C. The electrolyte
D. The Platinum/TCO contact
In the table presented, the specifications of an FS-380 Solar module is presented. The area of the module is 0.72 \(m^2\). What is the efficiency of the module in \( \%\), under standard test conditions \(1000 W/m^2\)? ______
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