题目内容
The JFET is a _________ device and the p-channel JFET is generally a lower frequency device than the n-channel JFET due to the lower _________ mobility.
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For pn JFET, when both gate and drain voltages are applied. The depletion region width will vary with distance through the channel. ( )
The pinch off of MESFET means that the space charge region reaches the substrate when the applied negative gate voltage is sufficiently large. ( )
The separation of the majority carriers from the ionized impurities can be achieved in a heterostructure that has an abrupt discontinuity in conduction and valence bands. ( )
The high electron mobility transistor () fabricated from heterojunctions satisfies the following requirements ____________
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