题目内容

Three equivalent circuit models for a bipolar transistor are ___________.

A. Kirchoff Model
B. E-M(Ebers-Moll) Model
C. G-P(Gummel-Poon) Model
D. H-P(Hybrid-Pi) Model

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The bipolar transistor is a transit-time device. As the frequency increases, this transit time can become comparable to the period of the input signal. ()

The Schottky-clamped transistor is frequently employed to decrease the switching speed. ( )

The JFET is a _________ device and the p-channel JFET is generally a lower frequency device than the n-channel JFET due to the lower _________ mobility.

A. majority-carrier; hole
B. minority-carrier; hole
C. majority-carrier; electron
D. minority-carrier; electron

For pn JFET, when both gate and drain voltages are applied. The depletion region width will vary with distance through the channel. ( )

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