题目内容

Imagine that you are in the lab and you can decide the thickness of the Si layer of your solar cell. You want to optimize the solar cell performance for a wavelength of \(\lambda=1000nm\), for which the absorption coefficient is \(\alpha(1000nm)=10^2cm^{-1}\). Which of the following thicknesses \(d_{Si}\) would give a better performance? Take into account that you already know two things:\((1)\) Beer-Lambert's law.\((2)\) For silicon, the minority carrier diffusivity is around \(D=27 cm^2/s\) and the minority carrier lifetime is around \(\tau=15\mu s\).

A. \(d_{Si}=100\mu m\)
B. \(d_{Si}=180\mu m\)
C. \(d_{Si}=300\mu m\)

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We have discussed that a bare crystalline silicon surface contains many defects which act as SRH recombination centers. How can the surface recombination at the air/n-silicon interface be reduced?Note that you can mark more than one answer.

A. By decreasing the doping of the n-layer.
By increasing the doping of the n-layer.
C. By depositing a thin insulating layer on top of the n-layer.
D. By depositing a thin conductive layer on top of the n-layer.

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Consider a c-Si solar cell whose fingers have a resistance \(R=0.1\Omega\). What would be the finger's resistance (in \(\Omega\)) if the finger's width is doubled and the finger's height is one third of its initial value? ______

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Which of the following processes is used in order to fabricate polysilicon?Note that more than one answer is possible.

A. The Czochralski process
B. Fluid bed reactor process
C. The float-zone process
D. The Siemens process

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Assume that bypass diodes are installed across every 3 cells of the string. What will the current through the string now be (in \(A\))? ______

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A. \(d_{Si}=100\mu m\) B. \(d_{Si}=180\mu m\) C. \(d_{Si}=300\mu m\)

We have discussed that a bare crystalline silicon surface contains many defects which act as SRH recombination centers. How can the surface recombination at the air/n-silicon interface be reduced?Note that you can mark more than one answer.

Consider a c-Si solar cell whose fingers have a resistance \(R=0.1\Omega\). What would be the finger's resistance (in \(\Omega\)) if the finger's width is doubled and the finger's height is one third of its initial value? ______

Which of the following processes is used in order to fabricate polysilicon?Note that more than one answer is possible.

Assume that bypass diodes are installed across every 3 cells of the string. What will the current through the string now be (in \(A\))? ______

A. \(d_{Si}=100\mu m\)
B. \(d_{Si}=180\mu m\)
C. \(d_{Si}=300\mu m\)