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We have discussed that a bare crystalline silicon surface contains many defects which act as SRH recombination centers. How can the surface recombination at the air/n-silicon interface be reduced?Note that you can mark more than one answer.

A. By decreasing the doping of the n-layer.
By increasing the doping of the n-layer.
C. By depositing a thin insulating layer on top of the n-layer.
D. By depositing a thin conductive layer on top of the n-layer.

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Consider a c-Si solar cell whose fingers have a resistance \(R=0.1\Omega\). What would be the finger's resistance (in \(\Omega\)) if the finger's width is doubled and the finger's height is one third of its initial value? ______

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Which of the following processes is used in order to fabricate polysilicon?Note that more than one answer is possible.

A. The Czochralski process
B. Fluid bed reactor process
C. The float-zone process
D. The Siemens process

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Assume that bypass diodes are installed across every 3 cells of the string. What will the current through the string now be (in \(A\))? ______

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Assume a string of 36 PV cells in a module exposed to sunlight as shown in the figure. Each PV cell has a current and voltage output of \(2A\) and \(0.5V\), respectively. Cell 36 is partially shaded due to a leaf, which causes the current of this cell to drop to \(0.5A\). What will be the output current of this string (in \(A\)) ? Which cell will dissipate the highest amount of heat?

A. Cell 1
B. Cell 36
C. All cells will dissipate the same amount of heat due to the shaded cell.
D. There will not be any heat dissipation, but only the current will drop.

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We have discussed that a bare crystalline silicon surface contains many defects which act as SRH recombination centers. How can the surface recombination at the air/n-silicon interface be reduced?Note that you can mark more than one answer.

A. By decreasing the doping of the n-layer. By increasing the doping of the n-layer. C. By depositing a thin insulating layer on top of the n-layer. D. By depositing a thin conductive layer on top of the n-layer.

Consider a c-Si solar cell whose fingers have a resistance \(R=0.1\Omega\). What would be the finger's resistance (in \(\Omega\)) if the finger's width is doubled and the finger's height is one third of its initial value? ______

Which of the following processes is used in order to fabricate polysilicon?Note that more than one answer is possible.

Assume that bypass diodes are installed across every 3 cells of the string. What will the current through the string now be (in \(A\))? ______

A. By decreasing the doping of the n-layer.
By increasing the doping of the n-layer.
C. By depositing a thin insulating layer on top of the n-layer.
D. By depositing a thin conductive layer on top of the n-layer.