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Let's assume that solar light reaches a silicon solar cell with an angle of incidence of \(\theta_i=0^o\). For simplicity, let's consider the refractive index of silicon to be \(n_{Si}=3.5\). The refractive index of air is \(n_{air}=1\). What percentage of light would be lost due to reflection at the air-silicon interface? Assume that the solar light is randomly polarized. ______

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The thickness \(d\) (in \(\mu m\)) required to achieve a light absorption of 90% for Si is: ______

The thickness \(d\) (in \(\mu m\)) required to achieve a light absorption of 90% for Ge is: ______

The thickness \(d\) (in \(\mu m\)) required to achieve a light absorption of 90% for InP is: ______

In the figure below the absorption coefficient as a function of the wavelength for several semiconductor materials is presented. Let's consider monochromatic light of photons with energy of \(E_{ph}=1.55eV\) that incidents a film with thickness \(d\). If we ignore possible reflection losses at the rear and front interfaces of the film, what thickness \(d\) (in \(\mu m\)) is required to achieve a light absorption of 90%?The absorption coefficients for the different semiconductor materials at \(\alpha(800nm)\) are:\(\alpha_{GaAs}=210^4cm^{-1}\)\(\alpha_{InP}=410^4cm^{-1}\)\(\alpha_{Ge}=610^4cm^{-1}\)\(\alpha_{Si}=110^3cm^{-1}\).The thickness \(d\) (in \(\mu m\)) required to achieve a light absorption of 90% for GaAs is: ______