Which one is not semiconductor microwave device.( )
A. Tunnel Diode
B. GUNN Diode
C. IMPATT Diode
D. Photodiode
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Which one is not the characteristics of power transistor.( )
A. The relatively wide base width implies a much smaller current gain β
B. Large area device implies a larger junction capacitance
C. The current gain is generally smaller in the power transistors
D. Large area device increases the cutoff frequency
Which one is not the advantages of power MOSFET compared to bipolar power transistor.( )
A. faster switching times
B. no second breakdown
C. stable gain and response time over a wide temperature range
D. higher output power
Both MOSFET and bipolar transistor can be used for power transistors.( )
The current in power MOSFETs is independent of temperature.( )
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