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What is the proper order, from lower purity to higher purity, of the following types of silicon?

A. Metallurgical silicon / monocrystalline silicon / polysilicon
B. Monocrystalline silicon / polysilicon / metallurgical silicon
C. Metallurgical silicon / polysilicon / monocrystalline silicon
D. Polysilicon / metallurgical silicon / monocrystalline silicon

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Which of the following statements is true about monocrystalline and multicrystalline silicon?

A. SRH recombinations are more important in multicrystalline than in monocrystalline silicon.
B. Higher open-circuit voltages are obtained with multicrystalline than with monocrystalline silicon.
C. The open-circuit voltage increases as the grain size of the multicrystalline silicon absorber layer decreases.
D. The lifetime of minority charge carriers is higher in multicrystalline than in monocrystalline silicon.

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We have discussed that indirect band gap materials have a lower absorption coefficient than direct band gap materials, due to the fact that the charge carriers need a change in energy AND momentum in order to be excited. If both Si and Ge are indirect band gap materials, why does Ge have a much higher absorption coefficient than Si in the visible wavelength range?

A. Because Ge has more valence electrons than Si.
Because Ge has a higher band gap than Si.
C. Because Si has direct transitions in this part of the spectrum.
D. Because Ge has direct transitions in this part of the spectrum.

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The electron diffusion coefficient is \(D_e=4*10^{-5} cm^2/s\) and the thickness of \(TiO_2\) is \(4\mu m\). What is the lifetime of the injected electrons (in \( ms\))? ______

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What is the driving force (in eV) for electron injection from the polymer to the semiconductor? ______

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What is the proper order, from lower purity to higher purity, of the following types of silicon?

A. Metallurgical silicon / monocrystalline silicon / polysilicon B. Monocrystalline silicon / polysilicon / metallurgical silicon C. Metallurgical silicon / polysilicon / monocrystalline silicon D. Polysilicon / metallurgical silicon / monocrystalline silicon

Which of the following statements is true about monocrystalline and multicrystalline silicon?

The electron diffusion coefficient is \(D_e=4*10^{-5} cm^2/s\) and the thickness of \(TiO_2\) is \(4\mu m\). What is the lifetime of the injected electrons (in \( ms\))? ______

What is the driving force (in eV) for electron injection from the polymer to the semiconductor? ______

A. Metallurgical silicon / monocrystalline silicon / polysilicon
B. Monocrystalline silicon / polysilicon / metallurgical silicon
C. Metallurgical silicon / polysilicon / monocrystalline silicon
D. Polysilicon / metallurgical silicon / monocrystalline silicon