题目内容

In a CdTe solar cell

A. Light is mainly absorbed in the n-type CdS layer; this layer makes junction with the p-type CdTe layer.
B. Light is mainly absorbed in the n-type CdTe layer; this layer makes junction with the p-type CdS layer.
C. Light is mainly absorbed in the p-type CdS layer; this layer makes junction with the n-type CdTe layer.
D. Light is mainly absorbed in the p-type CdTe layer; this layer makes junction with the n-type CdS layer.

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The figure below depicts the band diagram of a CIGS solar cell. Light enters from the left part of the figure. Which are the corresponding materials A, B and C?

A is CdS, B is CIGS and C is ZnO
B. A is CIGS, B is CdS and C is ZnO
C. A is ZnO, B is CIGS and C is CdS
D. A is ZnO, B is CdS and C is CIGS

The figure below shows the absorption coefficient \(\alpha\) for amorphous and crystalline silicon. The figure also displays the solar irradiance of the AM1.5 spectrum due to photons with wavelengths lower than \(\lambda\).Which percentage of the solar spectrum does an a-Si:H layer of 300 nm thickness absorb? Remember that the AM1.5 spectrum has a total irradiance of \(1000W/m^2\). Hint: You can assume that the layer absorbs all photons with wavelength lower than that at which \(\alpha=1/d\).How thick should a c-Si layer (in \(\mu m\)) be in order to absorb that amount of the solar spectrum? ______

The figure below shows the absorption coefficient \(\alpha\) for amorphous and crystalline silicon. The figure also displays the solar irradiance of the AM1.5 spectrum due to photons with wavelengths lower than \(\lambda\).Which percentage of the solar spectrum does an a-Si:H layer of 300 nm thickness absorb? Remember that the AM1.5 spectrum has a total irradiance of \(1000W/m^2\). Hint: You can assume that the layer absorbs all photons with wavelength lower than that at which \(\alpha=1/d\). ______

Silicon wafers can be p-doped by diffusing boron into the wafer. Imagine that boron is diffused into a wafer with no previous boron in it at a temperature of \(1100^oC \) for 5 hours. The diffusion can be described by the Fick's law, the same law studied in block 2.3, but for non-charged atoms in this case. The law gives us the diffusion flux \(J\) for a certain material with diffusion coefficient \(D\) and density gradient \(dn/dx\):\(J=D\frac{dn}{dx}\)If the concentration of boron at the surface is \(10^{18} cm^{-3}\), calculate the depth below the surface (in \(\mu m\)) at which boron concentration is \(10^{17} cm^{-3}\). The boron diffusion flux is \(310^{9} cm^{-2}s^{-1}\) and the diffusion coefficient for boron diffusing in silicon at \(1100^oC \) is \(1.510^{-12} cm^2/s\). ______