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A four-layer pnpn structure with a gate control terminal is a kind of SCR.( )

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The______ process allows the growth of very thin layers of specific semiconductor materials with specific dopings, making it possible to fabricate multiple heterojunction layers HEMT.

The description ( ) is not right for the concepts of junction field effect transistor. A.the

A. junction field effect transistor passes through
B. semiconductor region called
C. channel with ohmic contacts at both ends B.the channel current is affected by the channel conductance modulation effect C.the phenomenon of modulating the conductance of
D. semiconductor by an electric field applied perpendicular to the surface of

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The threshold voltage for the n-channel enhancement mode MESFET is( ), the threshold voltage for the n-channel depletion mode MESFET is( ).( )

A. positive, positive
B. negative, negative
C. positive, negative
D. negative, positive

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Which one is not Junction Field-Effect Transistor.( )

A. pn JFET
B. MESFET
C. HEMT
D. bipolar transitor

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