题目内容
The transport currents of the electrons and holes in a semiconductor will be driven by ( ).
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( ) refers to the average carrier drift velocity of the holes or electrons generated per unit electric field intensity.
In the semiconductor, the mobility ( ) with the increase of doping concentration.
The Fermi energy will lie in the valence band when the concentration of holes exceeds the density of states, it is called ______ .
A pure semiconductor with no impurity atoms and no lattice defects in the crystal called ______ .
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