题目内容

Which of the following statements is true about monocrystalline and multicrystalline silicon?

A. SRH recombinations are more important in multicrystalline than in monocrystalline silicon.
B. Higher open-circuit voltages are obtained with multicrystalline than with monocrystalline silicon.
C. The open-circuit voltage increases as the grain size of the multicrystalline silicon absorber layer decreases.
D. The lifetime of minority charge carriers is higher in multicrystalline than in monocrystalline silicon.

查看答案

搜索结果不匹配？点我反馈

更多问题

We have discussed that indirect band gap materials have a lower absorption coefficient than direct band gap materials, due to the fact that the charge carriers need a change in energy AND momentum in order to be excited. If both Si and Ge are indirect band gap materials, why does Ge have a much higher absorption coefficient than Si in the visible wavelength range?

A. Because Ge has more valence electrons than Si.
Because Ge has a higher band gap than Si.
C. Because Si has direct transitions in this part of the spectrum.
D. Because Ge has direct transitions in this part of the spectrum.

查看答案

The electron diffusion coefficient is \(D_e=4*10^{-5} cm^2/s\) and the thickness of \(TiO_2\) is \(4\mu m\). What is the lifetime of the injected electrons (in \( ms\))? ______

查看答案

What is the driving force (in eV) for electron injection from the polymer to the semiconductor? ______

查看答案

Junction B has a different absorber layer than junction A. Above its band gap, the solar cell B has an EQE = 0.60 that remains constant. Calculate the short-circuit current density \(J_{sc}\) of the junction B (in \(mA/cm^2\)) if the solar cell is measured under the solar simulator. ______

查看答案