The internal pinch-off voltage Vp0 is the gate-to-source voltage to achieve pinch-off.( )
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The ideal saturation drain current is independent of the drain-to-source voltage.( )
As frequency needs, power capacity, and low noise performance requirements,the high electron mobility transistor ______ fabricated from ______ .
The two breakdown mechanisms in bipolar transistor are ______ and ______ .
Considering the Hybrid-Pi Model in bipolar transistor, the gain is a function of the input signal frequency.( )