题目内容

As the distance from a semiconductor surface decreases, the steady-state excess hole concentration will ( ).

A. increase
B. decrease
C. remain unchanged
D. be close to zero

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The excess minority carrier lifetime at the surface is ( ) the corresponding lifetime in the bulk material.

A. equal to
B. more than
C. small than
D. greater than

The excess minority carrier lifetime at the surface is greater than the corresponding lifetime in the bulk material. ( )

In the Shockley-Read-Hall Theory of recombination,the basic trapping and emission processes are ( ).

A. capture of electron
B. emission of electron
C. capture of hole
D. emission of hole

Since the internal E-field creates a force attracting the electrons and holes, this E-field will hold the pulses of excess electrons and excess holes together. The negatively charged electrons and positively charged holes then will drift or diffuse together with a single effective mobility or diffusion coefficient. This phenomenon is called ______ .